SSM6K809R,LXHF Toshiba Semiconductor and Storage


docget.jsp?did=63955&prodName=SSM6K809R
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.51 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM6K809R,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote SSM6K809R,LXHF nach Preis ab 0.46 EUR bis 2.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM6K809R,LXHF SSM6K809R,LXHF Toshiba 1E5F98E39CCA4B2F3B089BD99FE0B1568355163434DEC852C769A4360AAC1309.pdf MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F
auf Bestellung 37637 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.96 EUR
10+1.23 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
3000+0.48 EUR
6000+0.46 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K809R,LXHF SSM6K809R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=63955&prodName=SSM6K809R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
16+1.31 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K809R,LXHF 1E5F98E39CCA4B2F3B089BD99FE0B1568355163434DEC852C769A4360AAC1309.pdf
Hersteller: Toshiba
MOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F
auf Bestellung 37637 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.96 EUR
10+1.23 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
3000+0.48 EUR
6000+0.46 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K809R,LXHF docget.jsp?did=63955&prodName=SSM6K809R
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
16+1.31 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH