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SSM6K809R,LXHF

SSM6K809R,LXHF Toshiba Semiconductor and Storage

SSM6K809R_datasheet_en_20210528.pdf?did=63955&prodName=SSM6K809R Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
Mindestbestellmenge: 3000
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Technische Details SSM6K809R,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote SSM6K809R,LXHF nach Preis ab 0.59 EUR bis 1.64 EUR

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SSM6K809R,LXHF SSM6K809R,LXHF Hersteller : Toshiba Semiconductor and Storage SSM6K809R_datasheet_en_20210528.pdf?did=63955&prodName=SSM6K809R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6566 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 17
SSM6K809R,LXHF SSM6K809R,LXHF Hersteller : Toshiba SSM6K809R_datasheet_en_20210528-2307059.pdf MOSFET AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F
auf Bestellung 39008 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
32+1.64 EUR
37+ 1.43 EUR
100+ 0.99 EUR
500+ 0.83 EUR
1000+ 0.7 EUR
3000+ 0.63 EUR
6000+ 0.61 EUR
Mindestbestellmenge: 32