SSM6K810R,LF Toshiba Semiconductor and Storage


docget.jsp?did=63953&prodName=SSM6K810R
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.31 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6K810R,LF Toshiba Semiconductor and Storage

Description: SMALL SIGNAL MOSFET N-CH VDSS=10, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V.

Weitere Produktangebote SSM6K810R,LF nach Preis ab 0.29 EUR bis 1.29 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM6K810R,LF SSM6K810R,LF Toshiba Semiconductor and Storage docget.jsp?did=63953&prodName=SSM6K810R Description: SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 5720 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
28+0.76 EUR
100+0.51 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K810R,LF SSM6K810R,LF Toshiba 7D73B8FD8D727D7671D397E7261D21BDB265F1ECE5ABCDCB98D6A502EA11B676.pdf MOSFETs Small Signal MOSFET N-ch VDSS=100V, VGSS=+/-20V, RDS(a.4.5V)=0.092ohm, ID=3.5A
auf Bestellung 2881 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.29 EUR
10+0.81 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.38 EUR
3000+0.31 EUR
6000+0.29 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K810R,LF docget.jsp?did=63953&prodName=SSM6K810R
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS=10
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 5720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
28+0.76 EUR
100+0.51 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K810R,LF 7D73B8FD8D727D7671D397E7261D21BDB265F1ECE5ABCDCB98D6A502EA11B676.pdf
Hersteller: Toshiba
MOSFETs Small Signal MOSFET N-ch VDSS=100V, VGSS=+/-20V, RDS(a.4.5V)=0.092ohm, ID=3.5A
auf Bestellung 2881 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.29 EUR
10+0.81 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.38 EUR
3000+0.31 EUR
6000+0.29 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH