Technische Details SSM6L12TU,LF(T Toshiba
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A, Kind of channel: enhancement, Version: ESD, Type of transistor: N/P-MOSFET, Kind of package: reel; tape, Case: UF6, Mounting: SMD, Polarisation: unipolar, Pulsed drain current: 1.5A, Drain-source voltage: 30/-20V, Drain current: 0.5/-0.5A, On-state resistance: 180/430mΩ, Power dissipation: 0.5W, Gate-source voltage: ±12V; ±20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SSM6L12TU,LF(T
Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM6L12TU,LF(T | Hersteller : TOSHIBA |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: UF6 Mounting: SMD Polarisation: unipolar Pulsed drain current: 1.5A Drain-source voltage: 30/-20V Drain current: 0.5/-0.5A On-state resistance: 180/430mΩ Power dissipation: 0.5W Gate-source voltage: ±12V; ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SSM6L12TU,LF(T | Hersteller : TOSHIBA |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: UF6 Mounting: SMD Polarisation: unipolar Pulsed drain current: 1.5A Drain-source voltage: 30/-20V Drain current: 0.5/-0.5A On-state resistance: 180/430mΩ Power dissipation: 0.5W Gate-source voltage: ±12V; ±20V |
Produkt ist nicht verfügbar |