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SSM6L12TU,LF

SSM6L12TU,LF Toshiba

SSM6L12TU_datasheet_en_20100215-1140039.pdf Hersteller: Toshiba
MOSFET LowON Res MOSFET ID=-0.5A VDSS=-30V
auf Bestellung 17777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.82 EUR
10+ 0.64 EUR
100+ 0.36 EUR
1000+ 0.24 EUR
3000+ 0.2 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 4
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Technische Details SSM6L12TU,LF Toshiba

Description: MOSFET N/P-CH 30V 500MA UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V, Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: UF6, Part Status: Active.

Weitere Produktangebote SSM6L12TU,LF nach Preis ab 0.28 EUR bis 0.9 EUR

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SSM6L12TU,LF SSM6L12TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=22374&prodName=SSM6L12TU Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
25+ 0.73 EUR
100+ 0.5 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 20
SSM6L12TU,LF SSM6L12TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=22374&prodName=SSM6L12TU Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
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