| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6L12TU,LF Toshiba
Description: MOSFET N/P-CH 30V 500MA UF6, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 30V, 20V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6L12TU,LF nach Preis ab 0.28 EUR bis 0.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6L12TU,LF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 30V 500MA UF6Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1.1V @ 100µA Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 30V, 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SSM6L12TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 500MA UF6 Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1.1V @ 100µA Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 30V, 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |