SSM6L35FE,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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Technische Details SSM6L35FE,LM Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.
Weitere Produktangebote SSM6L35FE,LM nach Preis ab 0.13 EUR bis 0.86 EUR
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SSM6L35FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
auf Bestellung 27310 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L35FE,LM | Toshiba |
MOSFET Small Signal MOSFET |
auf Bestellung 6152 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6L35FE,LM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 27310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| SSM6L35FE,LM |
|
Hersteller: Toshiba
MOSFET Small Signal MOSFET
MOSFET Small Signal MOSFET
auf Bestellung 6152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.25 EUR |