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SSM6L35FE,LM

SSM6L35FE,LM Toshiba Semiconductor and Storage

SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.11 EUR
12000+0.09 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6L35FE,LM Toshiba Semiconductor and Storage

Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.

Weitere Produktangebote SSM6L35FE,LM nach Preis ab 0.11 EUR bis 0.72 EUR

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SSM6L35FE,LM SSM6L35FE,LM Hersteller : Toshiba Semiconductor and Storage SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 27310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
SSM6L35FE,LM SSM6L35FE,LM Hersteller : Toshiba SSM6L35FE_datasheet_en_20150909-1916198.pdf MOSFET Small Signal MOSFET
auf Bestellung 6152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.56 EUR
100+0.32 EUR
500+0.21 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH