SSM6L40TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N/P-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.20 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
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Technische Details SSM6L40TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V, Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA, Supplier Device Package: UF6, Part Status: Active.
Weitere Produktangebote SSM6L40TU,LF nach Preis ab 0.17 EUR bis 0.99 EUR
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SSM6L40TU,LF | Hersteller : Toshiba |
MOSFETs LowON Res MOSFET ID=1.6A VDSS=30V |
auf Bestellung 165153 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L40TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 1.6A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA Supplier Device Package: UF6 Part Status: Active |
auf Bestellung 110948 Stücke: Lieferzeit 10-14 Tag (e) |
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