| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.65 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.14 EUR |
| 4000+ | 0.11 EUR |
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Technische Details SSM6N15AFE,LM Toshiba
Description: MOSFET 2N-CH 30V 0.1A ES6, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 100mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 150mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1.5V @ 100µA.
Weitere Produktangebote SSM6N15AFE,LM nach Preis ab 0.12 EUR bis 0.69 EUR
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SSM6N15AFE,LM | Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 30V 0.1A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 3255 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N15AFE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A ES6 Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1.5V @ 100µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA Drain to Source Voltage (Vdss): 30V Power - Max: 150mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 3255 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6N15AFE,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| SSM6N15AFE,LM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.1A ES6
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| 44+ | 0.48 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |