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SSM6N15AFE,LM

SSM6N15AFE,LM Toshiba

6F4FBFC6ED582E4549EA0DB481CC7889CFCA9B1C9654D83EC4B6FB8CFD607A70.pdf
Hersteller: Toshiba
MOSFETs 30V VDSS 20V VGSS N-Ch 150mW PD
auf Bestellung 3923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.55 EUR
10+0.36 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
4000+0.092 EUR
Mindestbestellmenge: 6
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Technische Details SSM6N15AFE,LM Toshiba

Description: MOSFET 2N-CH 30V 0.1A ES6, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 100mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 150mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1.5V @ 100µA.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM6N15AFE,LM SSM6N15AFE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N15AFE,LM SSM6N15AFE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
44+0.4 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N15AFE,LM SSM6N15AFE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
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Im Einkaufswagen  Stück im Wert von  UAH