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SSM6N15AFE,LM

SSM6N15AFE,LM Toshiba Semiconductor and Storage

SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6N15AFE,LM Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 30V 0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V, Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote SSM6N15AFE,LM nach Preis ab 0.081 EUR bis 0.58 EUR

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SSM6N15AFE,LM SSM6N15AFE,LM Hersteller : Toshiba SSM6N15AFE_datasheet_en_20140301-1916518.pdf MOSFETs 30V VDSS 20V VGSS N-Ch 150mW PD
auf Bestellung 1901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.57 EUR
10+0.4 EUR
100+0.17 EUR
1000+0.11 EUR
4000+0.1 EUR
8000+0.083 EUR
24000+0.081 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N15AFE,LM SSM6N15AFE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
44+0.4 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N15AFE,LM SSM6N15AFE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
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Im Einkaufswagen  Stück im Wert von  UAH