SSM6N24TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details SSM6N24TU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6N24TU,LF nach Preis ab 0.16 EUR bis 0.86 EUR
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SSM6N24TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.5A UF6 Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1.1V @ 100µA Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 500mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 5700 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N24TU,LF | Toshiba |
MOSFETs Small Signal MOSFET N-ch x 2 VDSS=30V, VGSS=+/-12V, ID=0.5A, RDS(ON)=0.145Ohm at 4.5V |
auf Bestellung 2405 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6N24TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.5A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.21 EUR |
| SSM6N24TU,LF |
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Hersteller: Toshiba
MOSFETs Small Signal MOSFET N-ch x 2 VDSS=30V, VGSS=+/-12V, ID=0.5A, RDS(ON)=0.145Ohm at 4.5V
MOSFETs Small Signal MOSFET N-ch x 2 VDSS=30V, VGSS=+/-12V, ID=0.5A, RDS(ON)=0.145Ohm at 4.5V
auf Bestellung 2405 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.16 EUR |