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SSM6N37FE,LM

SSM6N37FE,LM Toshiba Semiconductor and Storage

SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
Mindestbestellmenge: 31
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Technische Details SSM6N37FE,LM Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.25A 2-2N1D, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V, Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active.

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SSM6N37FE,LM SSM6N37FE,LM Hersteller : Toshiba SSM6N37FE_datasheet_en_20140301-1916374.pdf MOSFET SM Sig MOS 2 in 1 N-Ch 0.25A 20V -10V
auf Bestellung 41320 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
55+0.96 EUR
73+ 0.72 EUR
128+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.21 EUR
4000+ 0.18 EUR
8000+ 0.14 EUR
Mindestbestellmenge: 55
SSM6N37FE,LM SSM6N37FE,LM Hersteller : Toshiba Semiconductor and Storage SSM6N37FE_datasheet_en_20140301.pdf?did=1934&prodName=SSM6N37FE Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
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