SSM6N39TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2N-CH 20V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
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Technische Details SSM6N39TU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 1.6A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V, Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6.
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SSM6N39TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 1.6A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
Produkt ist nicht verfügbar |
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SSM6N39TU,LF | Hersteller : Toshiba |
MOSFET LowON Res MOSFET ID=1.6A VDSS=20V |
Produkt ist nicht verfügbar |