SSM6N44FE,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.14 EUR |
| 8000+ | 0.13 EUR |
| 12000+ | 0.12 EUR |
| 20000+ | 0.11 EUR |
| 28000+ | 0.11 EUR |
| 40000+ | 0.1 EUR |
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Technische Details SSM6N44FE,LM Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V, Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: ES6.
Weitere Produktangebote SSM6N44FE,LM nach Preis ab 0.13 EUR bis 0.73 EUR
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SSM6N44FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: ES6 |
auf Bestellung 74500 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N44FE,LM | Toshiba |
MOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 |
auf Bestellung 15991 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6N44FE,LM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
auf Bestellung 74500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| 50+ | 0.42 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.15 EUR |
| SSM6N44FE,LM |
|
Hersteller: Toshiba
MOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1
MOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1
auf Bestellung 15991 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.73 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 4000+ | 0.13 EUR |