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SSM6N62TU,LXHF

SSM6N62TU,LXHF Toshiba Semiconductor and Storage

SSM6N62TU_datasheet_en_20210528.pdf?did=37065&prodName=SSM6N62TU Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
auf Bestellung 1455 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.93 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 24
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Technische Details SSM6N62TU,LXHF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.8A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V, Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6.

Weitere Produktangebote SSM6N62TU,LXHF nach Preis ab 0.37 EUR bis 1.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SSM6N62TU,LXHF Hersteller : Toshiba SSM6N62TU_datasheet_en_20210528-2449170.pdf MOSFET SMOS Low RON Dual Nc h Id:0.8A, Vdss: 20
auf Bestellung 7266 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.12 EUR
55+ 0.96 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.44 EUR
3000+ 0.41 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 47
SSM6N62TU,LXHF SSM6N62TU,LXHF Hersteller : Toshiba Semiconductor and Storage SSM6N62TU_datasheet_en_20210528.pdf?did=37065&prodName=SSM6N62TU Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
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