SSM6N62TU,LXHF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 20V 0.8A UF6, FET Feature: Logic Level Gate, 1.2V Drive, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 500mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA.