auf Bestellung 5454 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
60+ | 0.87 EUR |
78+ | 0.67 EUR |
125+ | 0.42 EUR |
1000+ | 0.22 EUR |
3000+ | 0.2 EUR |
9000+ | 0.17 EUR |
24000+ | 0.16 EUR |
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Technische Details SSM6N7002KFU,LXH Toshiba
Description: MOSFET 2N-CH 60V 0.3A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 285mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: US6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SSM6N7002KFU,LXH nach Preis ab 0.22 EUR bis 0.88 EUR
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SSM6N7002KFU,LXH | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5135 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM6N7002KFU,LXH | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |