SSM6N951L,EFF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
auf Bestellung 9260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.53 EUR |
| 15+ | 1.25 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.67 EUR |
| 2000+ | 0.63 EUR |
| 5000+ | 0.6 EUR |
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Technische Details SSM6N951L,EFF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V, Supplier Device Package: 6-TCSPA (2.14x1.67), Part Status: Active.
Weitere Produktangebote SSM6N951L,EFF nach Preis ab 0.9 EUR bis 2.27 EUR
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SSM6N951L,EFF | Hersteller : Toshiba |
 MOSFET Small Signal MOSFET Rdson: 4.4mOhm Vgs: 4.5V |
auf Bestellung 8779 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM6N951L,EFF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 12V 8A 6TCSPA Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V Supplier Device Package: 6-TCSPA (2.14x1.67) Part Status: Active |
Produkt ist nicht verfügbar |