| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.08 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.27 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.86 EUR |
| 2500+ | 0.82 EUR |
| 5000+ | 0.79 EUR |
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Technische Details SSM6N951L,EFF Toshiba
Description: MOSFET 2N-CH 12V 8A 6TCSPA, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V, Supplier Device Package: 6-TCSPA (2.14x1.67), Part Status: Active.
Weitere Produktangebote SSM6N951L,EFF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SSM6N951L,EFF | Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 12V 8A 6TCSPAPackaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V Supplier Device Package: 6-TCSPA (2.14x1.67) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SSM6N951L,EFF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 12V 8A 6TCSPA Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V Supplier Device Package: 6-TCSPA (2.14x1.67) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SSM6N951L,EFF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SSM6N951L,EFF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH