SSM6P15FU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6
Drain to Source Voltage (Vdss): 30V
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
| Anzahl | Preis |
|---|---|
| 3000+ | 0.091 EUR |
| 6000+ | 0.084 EUR |
| 9000+ | 0.076 EUR |
| 15000+ | 0.075 EUR |
| 30000+ | 0.074 EUR |
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Technische Details SSM6P15FU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6, Drain to Source Voltage (Vdss): 30V, Power - Max: 200mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: US6, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 100mA.
Weitere Produktangebote SSM6P15FU,LF nach Preis ab 0.084 EUR bis 0.5 EUR
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SSM6P15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A US6 Power - Max: 200mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1.7V @ 100µA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA Drain to Source Voltage (Vdss): 30V |
auf Bestellung 49726 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P15FU,LF | Toshiba |
MOSFETs Sm-signal/PwrMgmt2n1 US6 (SOT-363) |
auf Bestellung 4377 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6P15FU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Description: MOSFET 2P-CH 30V 0.1A US6
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
auf Bestellung 49726 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 58+ | 0.3 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| SSM6P15FU,LF |
|
Hersteller: Toshiba
MOSFETs Sm-signal/PwrMgmt2n1 US6 (SOT-363)
MOSFETs Sm-signal/PwrMgmt2n1 US6 (SOT-363)
auf Bestellung 4377 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.5 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.092 EUR |
| 6000+ | 0.084 EUR |