SSM6P15FU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2P-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.10 EUR |
| 6000+ | 0.09 EUR |
| 9000+ | 0.08 EUR |
| 15000+ | 0.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6P15FU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 200mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V, Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote SSM6P15FU,LF nach Preis ab 0.08 EUR bis 0.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6P15FU,LF | Hersteller : Toshiba |
MOSFETs Sm-signal/PwrMgmt2n1 US6 (SOT-363) |
auf Bestellung 8311 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SSM6P15FU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 30462 Stücke: Lieferzeit 10-14 Tag (e) |
|