SSM6P35AFE,LF Toshiba
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.65 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |
| 4000+ | 0.1 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6P35AFE,LF Toshiba
Description: MOSFET 2P-CH 20V 0.25A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 150mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: ES6, Part Status: Active.
Weitere Produktangebote SSM6P35AFE,LF nach Preis ab 0.14 EUR bis 0.65 EUR
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SSM6P35AFE,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET 2P-CH 20V 0.25A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: ES6 Part Status: Active |
auf Bestellung 3564 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6P35AFE,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.25A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2P-CH 20V 0.25A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 3564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 52+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.14 EUR |