SSM6P35AFU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET 2P-CH 20V 0.25A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6P35AFU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.25A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 285mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: US6.
Weitere Produktangebote SSM6P35AFU,LF nach Preis ab 0.12 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6P35AFU,LF | Hersteller : Toshiba |
MOSFET Small Signal MOSFET P-ch x 2 Vdss:-20V Vgss:V Id:-0.25A |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SSM6P35AFU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.25A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: US6 |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
|