SSM6P35AFU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.25A US6
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 100µA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 285mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details SSM6P35AFU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.25A US6, Supplier Device Package: US6, Vgs(th) (Max) @ Id: 1V @ 100µA, FET Feature: Logic Level Gate, 1.2V Drive, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 285mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6P35AFU,LF nach Preis ab 0.12 EUR bis 0.83 EUR
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SSM6P35AFU,LF | Toshiba |
MOSFETs Small Signal MOSFET P-ch x 2 Vdss:-20V Vgss:V Id:-0.25A |
auf Bestellung 1860 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P35AFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.25A US6 Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1V @ 100µA FET Feature: Logic Level Gate, 1.2V Drive Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 285mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6P35AFU,LF |
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Hersteller: Toshiba
MOSFETs Small Signal MOSFET P-ch x 2 Vdss:-20V Vgss:V Id:-0.25A
MOSFETs Small Signal MOSFET P-ch x 2 Vdss:-20V Vgss:V Id:-0.25A
auf Bestellung 1860 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.52 EUR |
| 10+ | 0.33 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 3000+ | 0.12 EUR |
| SSM6P35AFU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.25A US6
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 100µA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 285mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 0.25A US6
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 100µA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 285mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 41+ | 0.52 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |