| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
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Technische Details SSM6P816R,LF Toshiba
Description: MOSFET 2P-CH 20V 6A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V, Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-TSOP-F.
Weitere Produktangebote SSM6P816R,LF nach Preis ab 0.44 EUR bis 1.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SSM6P816R,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET 2P-CH 20V 6A 6TSOPFPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-TSOP-F |
auf Bestellung 2061 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM6P816R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-TSOP-F
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 24+ | 0.9 EUR |
| 50+ | 0.65 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |