SSM6P816R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details SSM6P816R,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF, Supplier Device Package: 6-TSOP-F, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.8V Drive, Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.4W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6P816R,LF nach Preis ab 0.24 EUR bis 1.25 EUR
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SSM6P816R,LF | Toshiba |
MOSFETs MOSFET, DUAL P-CH, 20V, 6A, TSOP-F |
auf Bestellung 9486 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6P816R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 6A 6TSOPF Supplier Device Package: 6-TSOP-F Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.8V Drive Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 6743 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6P816R,LF |
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Hersteller: Toshiba
MOSFETs MOSFET, DUAL P-CH, 20V, 6A, TSOP-F
MOSFETs MOSFET, DUAL P-CH, 20V, 6A, TSOP-F
auf Bestellung 9486 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| SSM6P816R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 6A 6TSOPF
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6743 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |