Produktrezensionen
Produktbewertung abgeben
Technische Details SSRD8620CTT4G ON Semiconductor
Description: DIODE ARRAY GP 200V 3A DPAK, Qualification: AEC-Q101, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DPAK, Current - Average Rectified (Io) (per Diode): 3A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 55 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote SSRD8620CTT4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
SSRD8620CTT4G | Hersteller : onsemi |
Description: DIODE ARRAY GP 200V 3A DPAKQualification: AEC-Q101 Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |

