Weitere Produktangebote STB100NF04T4 nach Preis ab 1.6 EUR bis 5.74 EUR
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STB100NF04T4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A Mounting: SMD Case: D2PAK Pulsed drain current: 480A Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Technology: STripFET™ II Polarisation: unipolar On-state resistance: 4.6mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 120A Power dissipation: 300W |
auf Bestellung 851 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1145 Stücke: Lieferzeit 10-14 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 40 Volt 120 Amp |
auf Bestellung 1382 Stücke: Lieferzeit 10-14 Tag (e) |
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STB100NF04T4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STB100NF04T4 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 4300 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4300µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |