STB100NF04T4 STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.77 EUR |
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Technische Details STB100NF04T4 STMicroelectronics
Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STB100NF04T4 nach Preis ab 2.77 EUR bis 8.32 EUR
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STB100NF04T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 405 Stücke: Lieferzeit 7-14 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1580 Stücke: Lieferzeit 21-28 Tag (e) |
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STB100NF04T4 | Hersteller : STMicroelectronics |
MOSFET N-Ch 40 Volt 120 Amp |
auf Bestellung 2632 Stücke: Lieferzeit 14-28 Tag (e) |
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STB100NF04T4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STB100NF04T4 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.0043 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm |
auf Bestellung 769 Stücke: Lieferzeit 14-21 Tag (e) |
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STB100NF04T4 Produktcode: 170858 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STB100NF04T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB100NF04T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB100NF04T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |