STB10LN80K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.33 EUR |
| 10+ | 4.61 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.95 EUR |
| 1000+ | 2.45 EUR |
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Technische Details STB10LN80K5 STMicroelectronics
Description: MOSFET N-CHANNEL 800V 8A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STB10LN80K5 nach Preis ab 3.25 EUR bis 7.06 EUR
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STB10LN80K5 | STMicroelectronics |
Description: MOSFET N-CHANNEL 800V 8A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB10LN80K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 800V 8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.06 EUR |
| 10+ | 4.63 EUR |
| 100+ | 3.25 EUR |