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STB14N80K5

STB14N80K5 STMicroelectronics

en.DM00175161.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.51 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STB14N80K5 STMicroelectronics

Description: MOSFET N-CH 800V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V.

Weitere Produktangebote STB14N80K5 nach Preis ab 2.64 EUR bis 6.88 EUR

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STB14N80K5 STB14N80K5 Hersteller : STMicroelectronics stb14n80k5-1850249.pdf MOSFETs N-channel 800 V, 0.400 Ohm typ 12 A MDmesh K5 Power MOSFET
auf Bestellung 1194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.88 EUR
10+4.66 EUR
25+4.65 EUR
100+3.33 EUR
500+2.76 EUR
1000+2.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB14N80K5 STB14N80K5 Hersteller : STMicroelectronics en.DM00175161.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.88 EUR
10+4.64 EUR
100+3.28 EUR
500+3.00 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STB14N80K5 STB14N80K5 Hersteller : STMicroelectronics dm00175.pdf Trans MOSFET N-CH 800V 12A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB14N80K5 Hersteller : STMicroelectronics dm00175.pdf Trans MOSFET N-CH 800V 12A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH