STB155N3LH6 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 5.24 EUR |
| 10+ | 3.43 EUR |
| 100+ | 2.68 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.5 EUR |
| 2000+ | 1.41 EUR |
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Technische Details STB155N3LH6 STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
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STB155N3LH6 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 30V 80A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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STB155N3LH6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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