STB16NF06LT4 STMicroelectronics
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.11 EUR |
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Technische Details STB16NF06LT4 STMicroelectronics
Description: MOSFET N-CH 60V 16A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V.
Weitere Produktangebote STB16NF06LT4 nach Preis ab 1.02 EUR bis 4.11 EUR
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STB16NF06LT4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK Power dissipation: 45W Case: D2PAK Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 90mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK Power dissipation: 45W Case: D2PAK Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 90mΩ |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 16A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 1151 Stücke: Lieferzeit 21-28 Tag (e) |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
MOSFET N-Ch 60 Volt 16 Amp |
auf Bestellung 9000 Stücke: Lieferzeit 378-392 Tag (e) |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB16NF06LT4 | Hersteller : ST |
Transistor N-Channel MOSFET; 60V; 60V; 16V; 100mOhm; 16A; 45W; -55°C ~ 175°C; STB16NF06LT4 STB16NF06L TSTB16NF06L Anzahl je Verpackung: 25 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB16NF06LT4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 16A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB16NF06LT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 16A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
Produkt ist nicht verfügbar |