auf Bestellung 274 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.8 EUR |
17+ | 3.15 EUR |
100+ | 2.51 EUR |
500+ | 2.06 EUR |
1000+ | 1.76 EUR |
2000+ | 1.67 EUR |
5000+ | 1.62 EUR |
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Technische Details STB19NF20 STMicroelectronics
Description: MOSFET N-CH 200V 15A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote STB19NF20
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STB19NF20 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB19NF20 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.45A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB19NF20 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
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STB19NF20 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
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STB19NF20 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.45A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |