Technische Details STB200NF04-1 ST
Description: MOSFET N-CH 40V 120A I2PAK, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V.
Weitere Produktangebote STB200NF04-1
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STB200NF04-1 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 40V 120A I2PAKPackage / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V |
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STB200NF04-1 | Hersteller : STMicroelectronics |
MOSFET |
Produkt ist nicht verfügbar |