Produkte > STMICROELECTRONICS > STB200NF04T4
STB200NF04T4

STB200NF04T4 STMicroelectronics


STB200NF04-1.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STB200NF04T4 STMicroelectronics

Description: MOSFET N-CH 40V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.

Weitere Produktangebote STB200NF04T4

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STB200NF04T4 STB200NF04T4 Hersteller : STMicroelectronics STB200NF04-1.pdf Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB200NF04T4 STB200NF04T4 Hersteller : STMicroelectronics stb200nf04-974222.pdf MOSFET N-Ch 40 Volt 120 Amp
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH