Technische Details STB21NM50N-1 ST
Description: MOSFET N-CH 500V 18A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V.
Weitere Produktangebote STB21NM50N-1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STB21NM50N-1 | STM |
 N-кан. MOSFET 500V, 140 Вт, I2Pak (TO-262AA) Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STB21NM50N-1 | STMicroelectronics |
Description: MOSFET N-CH 500V 18A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STB21NM50N-1 | STMicroelectronics |
MOSFET N-CHANNEL MFT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STB21NM50N-1 |
|
Hersteller: STM
N-кан. MOSFET 500V, 140 Вт, I2Pak (TO-262AA) Транзистори
N-кан. MOSFET 500V, 140 Вт, I2Pak (TO-262AA) Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB21NM50N-1 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Description: MOSFET N-CH 500V 18A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STB21NM50N-1 |
|
Hersteller: STMicroelectronics
MOSFET N-CHANNEL MFT
MOSFET N-CHANNEL MFT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH