STB24NM60N
Produktcode: 58647
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Lieblingsprodukt
Hersteller: ST
Beschreibung: MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II
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Weitere Produktangebote STB24NM60N nach Preis ab 3.31 EUR bis 13.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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STB24NM60N | STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB24NM60N | STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB24NM60N | STMicroelectronics |
MOSFETs N-Ch 600V 0.168 Ohm 17A Mdmesh II |
auf Bestellung 223 Stücke: Lieferzeit 10-14 Tag (e) |
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STB24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 17A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
auf Bestellung 685 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB24NM60N |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.31 EUR |
| STB24NM60N |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 5.08 EUR |
| STB24NM60N |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.168 Ohm 17A Mdmesh II
MOSFETs N-Ch 600V 0.168 Ohm 17A Mdmesh II
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.76 EUR |
| 10+ | 9.32 EUR |
| 100+ | 6.78 EUR |
| 500+ | 6.5 EUR |
| 1000+ | 6.03 EUR |
| STB24NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 685 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.76 EUR |
| 10+ | 9.31 EUR |
| 100+ | 6.78 EUR |
| 500+ | 6.51 EUR |