STB28N60M2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
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Technische Details STB28N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V.
Weitere Produktangebote STB28N60M2 nach Preis ab 1.1 EUR bis 4.22 EUR
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STB28N60M2 | STMicroelectronics |
MOSFETs N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package |
auf Bestellung 1872 Stücke: Lieferzeit 10-14 Tag (e) |
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STB28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 22A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
auf Bestellung 1905 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB28N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 22A; 170W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 22A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: 25V Mounting: SMD Gate charge: 36nC Kind of channel: enhancement |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB28N60M2 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
MOSFETs N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
auf Bestellung 1872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.22 EUR |
| 10+ | 2.73 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.31 EUR |
| STB28N60M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 1905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.22 EUR |
| 10+ | 2.72 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.5 EUR |
| STB28N60M2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 22A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: 25V
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 22A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: 25V
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.1 EUR |