STB30NF20 STMicroelectronics


en.CD00150588.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.81 EUR
Mindestbestellmenge: 1000 Stücke
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Technische Details STB30NF20 STMicroelectronics

Description: MOSFET N-CH 200V 30A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V.

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STB30NF20 STB30NF20 STMicroelectronics en.CD00150588.pdf MOSFETs N Ch 1500V 2.5A Pwr MOSFET
auf Bestellung 927 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.05 EUR
10+3.27 EUR
100+2.28 EUR
500+1.89 EUR
1000+1.68 EUR
2000+1.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB30NF20 STB30NF20 STMicroelectronics en.CD00150588.pdf Description: MOSFET N-CH 200V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V
auf Bestellung 1302 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.45 EUR
10+3.53 EUR
100+2.43 EUR
500+1.96 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STB30NF20 en.CD00150588.pdf
Hersteller: STMicroelectronics
MOSFETs N Ch 1500V 2.5A Pwr MOSFET
auf Bestellung 927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.05 EUR
10+3.27 EUR
100+2.28 EUR
500+1.89 EUR
1000+1.68 EUR
2000+1.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB30NF20 en.CD00150588.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1597 pF @ 25 V
auf Bestellung 1302 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.45 EUR
10+3.53 EUR
100+2.43 EUR
500+1.96 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH