Weitere Produktangebote STB35N65M5
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STB35N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH Si 650V 27A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB35N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 27A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB35N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 27A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB35N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 27A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB35N65M5 | Hersteller : STMicroelectronics |
MOSFET POWER MOSFET N-CH 650V |
Produkt ist nicht verfügbar |