| Anzahl | Preis |
|---|---|
| 1+ | 3.43 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.11 EUR |
| 2000+ | 0.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STB36NF06LT4 STMicroelectronics
Description: MOSFET N-CH 60V 30A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STB36NF06LT4 nach Preis ab 1.26 EUR bis 3.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STB36NF06LT4 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 60V 30A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 736 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| STB36NF06LT4 |
|
auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
|
|
STB36NF06LT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 30A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |