STB40NF20 STMicroelectronics


en.CD00150592.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.98 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STB40NF20 STMicroelectronics

Description: MOSFET N-CH 200V 40A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.

Weitere Produktangebote STB40NF20 nach Preis ab 3.36 EUR bis 8.82 EUR

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STB40NF20 STB40NF20 STMicroelectronics en.CD00150592.pdf Description: MOSFET N-CH 200V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 1342 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.25 EUR
10+5.45 EUR
100+3.87 EUR
500+3.58 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STB40NF20 STB40NF20 STMicroelectronics en.CD00150592.pdf MOSFETs Low charge STripFET
auf Bestellung 1527 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.82 EUR
10+5.59 EUR
100+4.14 EUR
500+3.61 EUR
1000+3.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB40NF20 en.CD00150592.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 1342 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.25 EUR
10+5.45 EUR
100+3.87 EUR
500+3.58 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STB40NF20 en.CD00150592.pdf
Hersteller: STMicroelectronics
MOSFETs Low charge STripFET
auf Bestellung 1527 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+8.82 EUR
10+5.59 EUR
100+4.14 EUR
500+3.61 EUR
1000+3.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH