STB55NF03LT4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V
Description: MOSFET N-CH 30V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D²PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V
auf Bestellung 487 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 4.11 EUR |
| 10+ | 3.66 EUR |
| 100+ | 2.86 EUR |
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Technische Details STB55NF03LT4 STMicroelectronics
Description: MOSFET N-CH 30V 55A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D²PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V.
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auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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STB55NF03LT4 | Hersteller : STMicroelectronics |
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STB55NF03LT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 55A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D²PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V |
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STB55NF03LT4 | Hersteller : STMicroelectronics |
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