STB5N80K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 800V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V
auf Bestellung 205 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.71 EUR |
| 10+ | 3.91 EUR |
| 100+ | 3.11 EUR |
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Technische Details STB5N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V.
Weitere Produktangebote STB5N80K5 nach Preis ab 2.16 EUR bis 4.78 EUR
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STB5N80K5 | Hersteller : STMicroelectronics |
MOSFET N-channel 800 V, 1.50 Ohm typ 4 A MDmesh K5 Power MOSFET |
auf Bestellung 920 Stücke: Lieferzeit 14-28 Tag (e) |
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STB5N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) D2PAK T/R |
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| STB5N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) D2PAK T/R |
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STB5N80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 4A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V |
Produkt ist nicht verfügbar |