Technische Details STB70NH03LT4 STM
Description: MOSFET N-CH 30V 60A D2PAK, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 858W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).
Weitere Produktangebote STB70NH03LT4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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STB70NH03LT4 | STMicroelectronics |
Description: MOSFET N-CH 30V 60A D2PAKMounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 858W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
STB70NH03LT4 | STMicroelectronics |
MOSFETs N-Ch 30 Volt 60 Amp |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STB70NH03LT4 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 60A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 858W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 30V 60A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 858W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STB70NH03LT4 |
![]() |
Hersteller: STMicroelectronics
MOSFETs N-Ch 30 Volt 60 Amp
MOSFETs N-Ch 30 Volt 60 Amp
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



