STB80NF10T4 STMicroelectronics
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.42 EUR |
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Technische Details STB80NF10T4 STMicroelectronics
Description: MOSFET N-CH 100V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V.
Weitere Produktangebote STB80NF10T4 nach Preis ab 2.42 EUR bis 8.03 EUR
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STB80NF10T4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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STB80NF10T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB80NF10T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V |
auf Bestellung 1272 Stücke: Lieferzeit 21-28 Tag (e) |
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STB80NF10T4 | Hersteller : STMicroelectronics |
MOSFET N-Ch 100 Volt 80 Amp |
auf Bestellung 105 Stücke: Lieferzeit 14-28 Tag (e) |
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| STB80NF10T4 | Hersteller : ST |
Transistor N-Channel MOSFET; 100V; 20V; 15mOhm; 80A; 300W; -55°C ~ 175°C; STB80NF10T4 STB80NF10 TSTB80NF10 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STB80NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STB80NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB80NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB80NF10T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB80NF10T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |