STB80NF55-08AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 55 V, 6.5 mOhm typ 80 A STripFET Power MOSFET
| Anzahl | Preis |
|---|---|
| 1+ | 4.91 EUR |
| 100+ | 4.77 EUR |
| 250+ | 4.4 EUR |
| 500+ | 3.98 EUR |
| 1000+ | 2.34 EUR |
| 2000+ | 2.22 EUR |
| 5000+ | 2.09 EUR |
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Technische Details STB80NF55-08AG STMicroelectronics
Description: MOSFET N-CHANNEL 55V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 15 V, Qualification: AEC-Q101.
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STB80NF55-08AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 55V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 15 V Qualification: AEC-Q101 |
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STB80NF55-08AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 55V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |