Weitere Produktangebote STB85NF55LT4 nach Preis ab 1.6 EUR bis 4.93 EUR
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STB85NF55LT4 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 55V 80A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB85NF55LT4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 55 Volt 80 Amp |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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STB85NF55LT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 55V 80A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1736 Stücke: Lieferzeit 10-14 Tag (e) |
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