STB8N90K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.9 EUR |
| 10+ | 4.05 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.89 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details STB8N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V.
Weitere Produktangebote STB8N90K5 nach Preis ab 3.13 EUR bis 8.02 EUR
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STB8N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V |
auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
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STB8N90K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; 900V; 8A; 130W; D2PAK Type of transistor: N-MOSFET Drain-source voltage: 900V Drain current: 8A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Technology: MDmesh™ K5 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STB8N90K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Description: MOSFET N-CH 900V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
auf Bestellung 735 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.02 EUR |
| 10+ | 5.27 EUR |
| 50+ | 4.09 EUR |
| 100+ | 3.71 EUR |
| 500+ | 3.13 EUR |
| STB8N90K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; 900V; 8A; 130W; D2PAK
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 8A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Technology: MDmesh™ K5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; 900V; 8A; 130W; D2PAK
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 8A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Technology: MDmesh™ K5
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)