STB8N90K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 900V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 8.11 EUR |
| 10+ | 6.81 EUR |
| 100+ | 5.51 EUR |
| 500+ | 4.9 EUR |
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Technische Details STB8N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V.
Weitere Produktangebote STB8N90K5 nach Preis ab 4 EUR bis 8.32 EUR
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STB8N90K5 | Hersteller : STMicroelectronics |
MOSFET N-channel 900 V, 0.60 Ohm typ 8 A MDmesh K5 Power MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 287-301 Tag (e) |
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STB8N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 8A 3-Pin(2+Tab) D2PAK T/R |
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| STB8N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 8A 3-Pin(2+Tab) D2PAK T/R |
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STB8N90K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V |
Produkt ist nicht verfügbar |