STB8N90K5 STMicroelectronics
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 900V; 8A; Idm: 8A; 130W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 900V
Drain current: 8A
Pulsed drain current: 8A
Power dissipation: 130W
Case: D2PAK; TO263AB
Gate-source voltage: 30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Technology: MDmesh™
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Technische Details STB8N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 8A D2PAK, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Weitere Produktangebote STB8N90K5 nach Preis ab 2.89 EUR bis 8.04 EUR
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STB8N90K5 | STMicroelectronics |
MOSFETs N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package |
auf Bestellung 906 Stücke: Lieferzeit 10-14 Tag (e) |
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STB8N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 8A D2PAK Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STB8N90K5 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
MOSFETs N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.9 EUR |
| 10+ | 5.19 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.98 EUR |
| 2000+ | 2.89 EUR |
| STB8N90K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 8A D2PAK
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 900V 8A D2PAK
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.04 EUR |
| 10+ | 5.28 EUR |
| 100+ | 3.71 EUR |
| 500+ | 3.13 EUR |