auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.68 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 1.8 EUR |
| 2000+ | 1.69 EUR |
| 5000+ | 1.62 EUR |
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Technische Details STB8NM60D STMicroelectronics
Description: MOSFET N-CH 600V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V.
Weitere Produktangebote STB8NM60D nach Preis ab 2.97 EUR bis 4.58 EUR
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STB8NM60D | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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| STB8NM60D | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R |
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STB8NM60D | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R |
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STB8NM60D | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
Produkt ist nicht verfügbar |