Technische Details STB9NK60ZDT4 ST
Description: MOSFET N-CH 600V 7A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote STB9NK60ZDT4
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STB9NK60ZDT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 7A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V |
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