STD10NM60N STMicroelectronics
Hersteller: STMicroelectronics
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
| Anzahl | Privatkunde |
|---|---|
| 79+ | 2.07 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.9 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.74 EUR |
| 3000+ | 1.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD10NM60N STMicroelectronics
Description: STMICROELECTRONICS - STD10NM60N - Leistungs-MOSFET, n-Kanal, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 10A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 70W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.53ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote STD10NM60N nach Preis ab 1.69 EUR bis 7.25 EUR
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STD10NM60N | STMicroelectronics |
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 4487 Stücke: Lieferzeit 14-21 Tag (e) |
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STD10NM60N | STMicroelectronics |
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 85000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD10NM60N | STMicroelectronics |
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 85000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD10NM60N | STMicroelectronics |
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD10NM60N | STMicroelectronics |
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD10NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD10NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2035 Stücke: Lieferzeit 14-21 Tag (e) |
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STD10NM60N | STMicroelectronics |
MOSFETs N-channel 600 V Mdmesh 10A |
auf Bestellung 3643 Stücke: Lieferzeit 10-14 Tag (e) |
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STD10NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
auf Bestellung 3090 Stücke: Lieferzeit 10-14 Tag (e) |
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STD10NM60N | STMicroelectronics |
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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STD10NM60N | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD10NM60N - Leistungs-MOSFET, n-Kanal, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 70W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.53ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3409 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STD10NM60N |
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Hersteller: STMicroelectronics
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 4487 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 2.15 EUR |
| 100+ | 2.09 EUR |
| 250+ | 2.06 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 1.96 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 85000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.18 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 85000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.18 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.23 EUR |
| 5000+ | 2.08 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.23 EUR |
| 5000+ | 2.13 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.31 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.45 EUR |
| 37+ | 2.31 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.69 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V Mdmesh 10A
MOSFETs N-channel 600 V Mdmesh 10A
auf Bestellung 3643 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.51 EUR |
| 10+ | 3.92 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.59 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 4.75 EUR |
| 100+ | 3.32 EUR |
| 500+ | 2.75 EUR |
| STD10NM60N |
|
Hersteller: STMicroelectronics
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
STD10NM60N STMicroelectronics Transistors MOSFETs N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R - Arrow.com
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| STD10NM60N |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD10NM60N - Leistungs-MOSFET, n-Kanal, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 70W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.53ohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STD10NM60N - Leistungs-MOSFET, n-Kanal, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 70W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.53ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3409 Stücke:
Lieferzeit 14-21 Tag (e)