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STD10P10F6

STD10P10F6 STMicroelectronics

en.DM00116775.pdf
Hersteller: STMicroelectronics
MOSFETs P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
auf Bestellung 5196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.01 EUR
10+1.24 EUR
100+0.82 EUR
500+0.65 EUR
1000+0.58 EUR
2500+0.51 EUR
Mindestbestellmenge: 2
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Technische Details STD10P10F6 STMicroelectronics

Description: MOSFET P-CH 100V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V.

Weitere Produktangebote STD10P10F6 nach Preis ab 0.62 EUR bis 2.11 EUR

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STD10P10F6 STD10P10F6 Hersteller : STMicroelectronics en.DM00116775.pdf Description: MOSFET P-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V
auf Bestellung 2188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
STD10P10F6 STD10P10F6 Hersteller : STMicroelectronics en.DM00116775.pdf Description: MOSFET P-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V
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STD10P10F6 Hersteller : STMicroelectronics STD10P10F6.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -10A; 40W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Polarisation: unipolar
Drain current: -10A
Drain-source voltage: -100V
Gate charge: 16.5nC
On-state resistance: 0.18Ω
Power dissipation: 40W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH