STD10PF06T4
Produktcode: 27076
Hersteller: STGehäuse: D-Pak
Uds,V: 60
Id,A: 10
Rds(on),Om: 0.2
Ciss, pF/Qg, nC: 850/16
/: SMD
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Weitere Produktangebote STD10PF06T4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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STD10PF06T4 | Hersteller : STMicroelectronics |
Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD10PF06T4 | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 60V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V |
Produkt ist nicht verfügbar |
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STD10PF06T4 | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 60V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V |
Produkt ist nicht verfügbar |
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STD10PF06T4 | Hersteller : STMicroelectronics |
MOSFET P-Ch 60 Volt 10 Amp |
Produkt ist nicht verfügbar |