STD130N6F7 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CHANNEL 60V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.88 EUR |
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Technische Details STD130N6F7 STMicroelectronics
Description: MOSFET N-CHANNEL 60V 80A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V.
Weitere Produktangebote STD130N6F7 nach Preis ab 0.98 EUR bis 1.56 EUR
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STD130N6F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 60V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V |
auf Bestellung 3772 Stücke: Lieferzeit 10-14 Tag (e) |
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STD130N6F7 | Hersteller : STMicroelectronics |
MOSFETs N-channel 60 V, 4.2 mOhm typ 80 A STripFET F7 Power MOSFET in DPAK package |
auf Bestellung 2436 Stücke: Lieferzeit 10-14 Tag (e) |
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STD130N6F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2484 Stücke: Lieferzeit 14-21 Tag (e) |
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STD130N6F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2484 Stücke: Lieferzeit 14-21 Tag (e) |
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STD130N6F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD130N6F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 134W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 134W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 320A |
Produkt ist nicht verfügbar |