Weitere Produktangebote STD16N65M5 nach Preis ab 1.93 EUR bis 8.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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STD16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 279mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2179 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2440 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2440 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
MOSFETs N-Ch 650 Volt 12 Amp |
auf Bestellung 2085 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
auf Bestellung 4894 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M5 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD16N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 12 A, 0.23 ohm, TO-252 (DPAK), OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 90W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.23ohm |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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| STD16N65M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.24 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.45 EUR |
| 5000+ | 2.31 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.45 EUR |
| 5000+ | 2.36 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.48 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.49 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2179 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.68 EUR |
| 23+ | 3.75 EUR |
| 26+ | 3.32 EUR |
| 50+ | 2.45 EUR |
| 100+ | 2.38 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 4.77 EUR |
| 44+ | 3.74 EUR |
| 100+ | 2.93 EUR |
| 250+ | 2.69 EUR |
| 500+ | 2.37 EUR |
| 1000+ | 1.93 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 4.77 EUR |
| 44+ | 3.88 EUR |
| 100+ | 3.09 EUR |
| 250+ | 2.92 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.19 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 Volt 12 Amp
MOSFETs N-Ch 650 Volt 12 Amp
auf Bestellung 2085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.94 EUR |
| 10+ | 4.55 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.57 EUR |
| 2500+ | 2.4 EUR |
| STD16N65M5 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.06 EUR |
| 10+ | 4.62 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.63 EUR |
| STD16N65M5 |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STD16N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 12 A, 0.23 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 90W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.23ohm
Description: STMICROELECTRONICS - STD16N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 12 A, 0.23 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 90W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.23ohm
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 8.22 EUR |
| 45+ | 5.22 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.05 EUR |






