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STD20NF10T4

STD20NF10T4 STMicroelectronics

STD20NF10.pdf
Hersteller: STMicroelectronics
MOSFETs N-Ch 100 Volt 25 Amp
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Technische Details STD20NF10T4 STMicroelectronics

Description: MOSFET N CH 100V 25A DPAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc).

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STD20NF10T4 STD20NF10T4 Hersteller : STMicroelectronics STD20NF10.pdf Description: MOSFET N CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STD20NF10T4 STD20NF10.pdf
auf Bestellung 22500 Stücke:
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STD20NF10T4 STD20NF10T4 Hersteller : STMicroelectronics STD20NF10.pdf Description: MOSFET N CH 100V 25A DPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
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