STD28P3LLH6AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFET Automotive-grade P-channel -30 V, 0.027 Ohm typ -12 A, STripFET H6 Power MOSFET
| Anzahl | Preis |
|---|---|
| 2+ | 2.06 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.19 EUR |
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Technische Details STD28P3LLH6AG STMicroelectronics
Description: MOSFET P-CH 30V 12A DPAK, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
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STD28P3LLH6AG | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 30V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STD28P3LLH6AG | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 30V 12A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |